收藏本站
DMC3021LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features
Device
Q2
Q1
V (BR)DSS
30V
-30V
R DS(on) max
21m Ω @ V GS = 10V
32m Ω @ V GS = 4.5V
39m Ω @ V GS = -10V
53m Ω @ V GS = -4.5V
I D Max
T A = +25 ° C
8.5A
7.2A
-7A
-5.6A
?
?
?
?
?
?
?
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and
?
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET has been designed to minimize the on-state resistance
Mechanical Data
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
?
?
?
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
?
?
?
Power Management Functions
Analog Switch
Load Switch
S2
SO-8
D2
?
?
?
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.072 grams (approximate)
D2
D1
S1
Top View
G2
S1
G1
Top View
D2
D1
D1
G2
S2
N-Channel MOSFET
G1
P-Channel MOSFET
Ordering Information (Note 4)
Part Number
DMC3021LSD-13
Case
SO-8
Packaging
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
= Manufacturer’s Marking
C3021LD = Product Type Marking Code
YYWW = Date Code Marking
C3021LD
YY WW
C3021LD
YY WW
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1
4
1
4
Chengdu A/T Site
Shanghai A/T Site
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
1 of 8
www.diodes.com
February 2014
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMC3028LSD-13 MOSFET N+P 30V 5.5A SO8
DMC3035LSD-13 MOSFET COMPL PAIR 2000MW 8-SOIC
DMC4028SSD-13 MOSFET DUAL COMPL PAIR 8SOIC
DMC4040SSD-13 MOSFET N/P-CH 40V 5.7A SO8
DMC4050SSD-13 MOSFET N/P-CH 40V 4.2A SO8
DMG1012T-7 MOSFET N-CH 20V 630MA SOT-523
DMG1012UW-7 MOSFET N-CH 20V 1A SOT323
DMG1013T-7 MOSFET P-CH SOT-523
相关代理商/技术参数
DMC3021LSDQ-13 功能描述:MOSFET N/P-CH 30V 8.5A/7A 8-SO 制造商:diodes incorporated 系列:- 包装:剪切带（CT） 零件状态:在售 FET 类型:N 和 P 沟道 FET 功能:逻辑电平门 漏源电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:8.5A，7A 不同?Id，Vgs 时的?Rds On（最大值）:21 毫欧 @ 7A，10V 不同 Id 时的 Vgs（th）（最大值）:2.1V @ 250μA 不同 Vgs 时的栅极电荷?（Qg）（最大值）:16.1nC @ 10V 不同 Vds 时的输入电容（Ciss）（最大值）:767pF @ 10V 功率 - 最大值:2.5W 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商器件封装:8-SO 标准包装:1
DMC3025LSD-13 功能描述:MOSFET 30V Comp ENH Mode 25 to 30V MosFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMC3028LSD 制造商:Diodes Incorporated 功能描述:MOSFET NP CH W DIODE 30V SO8 制造商:Diodes Incorporated 功能描述:MOSFET, NP CH, W DIODE, 30V, SO8 制造商:Diodes Incorporated 功能描述:MOSFET, NP CH, W DIODE, 30V, SO8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W ;RoHS Compliant: Yes
DMC3028LSD-13 功能描述:MOSFET MOSFET SOP-8L RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMC3028LSDX-13 制造商:Diodes Incorporated 功能描述:30V Dual FET 28mOHm 10V VGS 7.1A 制造商:Diodes Incorporated 功能描述:MOSFET 30V Dual FET 28mOHm 10V VGS 7.1A
DMC3032LSD 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
DMC3032LSD-13 功能描述:MOSFET 30V VDSS 20V VGSS 2.5W PD COMP MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMC3035LSD 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET